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6.772 Compound Semiconductor Devices (MIT) 6.772 Compound Semiconductor Devices (MIT)

Description

This course outlines the physics, modeling, application, and technology of compound semiconductors (primarily III-Vs) in electronic, optoelectronic, and photonic devices and integrated circuits. Topics include: properties, preparation, and processing of compound semiconductors; theory and practice of heterojunctions, quantum structures, and pseudomorphic strained layers; metal-semiconductor field effect transistors (MESFETs); heterojunction field effect transistors (HFETs) and bipolar transistors (HBTs); photodiodes, vertical-and in-plane-cavity laser diodes, and other optoelectronic devices. This course outlines the physics, modeling, application, and technology of compound semiconductors (primarily III-Vs) in electronic, optoelectronic, and photonic devices and integrated circuits. Topics include: properties, preparation, and processing of compound semiconductors; theory and practice of heterojunctions, quantum structures, and pseudomorphic strained layers; metal-semiconductor field effect transistors (MESFETs); heterojunction field effect transistors (HFETs) and bipolar transistors (HBTs); photodiodes, vertical-and in-plane-cavity laser diodes, and other optoelectronic devices.

Subjects

physics | physics | modeling | modeling | application | application | technology of compound semiconductors | technology of compound semiconductors | electronic | electronic | optoelectronic | optoelectronic | photonic devices | photonic devices | integrated circuits | integrated circuits | properties | properties | heterojunctions | heterojunctions | quantum structures | quantum structures | pseudomorphic strained layers | pseudomorphic strained layers | metal-semiconductor field effect transistors (MESFETs) | metal-semiconductor field effect transistors (MESFETs) | heterojunction field effect transistors (HFETs) | heterojunction field effect transistors (HFETs) | bipolar transistors (HBTs) | bipolar transistors (HBTs) | photodiodes | photodiodes | laser diodes | laser diodes | optoelectronic devices | optoelectronic devices | applications | applications | compound semiconductors | compound semiconductors | electronic devices | electronic devices | compound semiconductor processing | compound semiconductor processing | metal-semiconductor field effect transistors | metal-semiconductor field effect transistors | MESFET | MESFET | heterojunction field effect transistors | heterojunction field effect transistors | HFET | HFET | bipolar transistors | bipolar transistors | HBT | HBT | vertical-cavity laser diodes | vertical-cavity laser diodes | in-plane-cavity laser diodes | in-plane-cavity laser diodes

License

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6.720J Integrated Microelectronic Devices (MIT) 6.720J Integrated Microelectronic Devices (MIT)

Description

6.720 examines the physics of microelectronic semiconductor devices for silicon integrated circuit applications. Topics covered include: semiconductor fundamentals, p-n junction, metal-oxide semiconductor structure, metal-semiconductor junction, MOS field-effect transistor, and bipolar junction transistor. The course emphasizes physical understanding of device operation through energy band diagrams and short-channel MOSFET device design. Issues in modern device scaling are also outlined. The course is worth 2 Engineering Design Points. Acknowledgments Prof. Jesús del Alamo would like to thank Prof. Harry Tuller for his support of and help in teaching the course. 6.720 examines the physics of microelectronic semiconductor devices for silicon integrated circuit applications. Topics covered include: semiconductor fundamentals, p-n junction, metal-oxide semiconductor structure, metal-semiconductor junction, MOS field-effect transistor, and bipolar junction transistor. The course emphasizes physical understanding of device operation through energy band diagrams and short-channel MOSFET device design. Issues in modern device scaling are also outlined. The course is worth 2 Engineering Design Points. Acknowledgments Prof. Jesús del Alamo would like to thank Prof. Harry Tuller for his support of and help in teaching the course.

Subjects

integrated microelectronic devices | integrated microelectronic devices | physics | physics | silicon | silicon | circuit | circuit | semiconductor | semiconductor | p-n junction | p-n junction | metal-oxide semiconductor structure | metal-oxide semiconductor structure | metal-semiconductor junction | metal-semiconductor junction | MOS field-effect transistor | MOS field-effect transistor | bipolar junction transistor | bipolar junction transistor | energy band diagram | energy band diagram | short-channel MOSFET | short-channel MOSFET | device characterization | device characterization | device design | device design

License

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6.720J Integrated Microelectronic Devices (MIT) 6.720J Integrated Microelectronic Devices (MIT)

Description

6.720 examines the physics of microelectronic semiconductor devices for silicon integrated circuit applications. Topics covered include: semiconductor fundamentals, p-n junction, metal-oxide semiconductor structure, metal-semiconductor junction, MOS field-effect transistor, and bipolar junction transistor. The course emphasizes physical understanding of device operation through energy band diagrams and short-channel MOSFET device design. Issues in modern device scaling are also outlined. The course is worth 2 Engineering Design Points. 6.720 examines the physics of microelectronic semiconductor devices for silicon integrated circuit applications. Topics covered include: semiconductor fundamentals, p-n junction, metal-oxide semiconductor structure, metal-semiconductor junction, MOS field-effect transistor, and bipolar junction transistor. The course emphasizes physical understanding of device operation through energy band diagrams and short-channel MOSFET device design. Issues in modern device scaling are also outlined. The course is worth 2 Engineering Design Points.

Subjects

integrated microelectronic devices | integrated microelectronic devices | physics | physics | silicon | silicon | circuit | circuit | semiconductor | semiconductor | p-n junction | p-n junction | metal-oxide semiconductor structure | metal-oxide semiconductor structure | metal-semiconductor junction | metal-semiconductor junction | MOS field-effect transistor | MOS field-effect transistor | bipolar junction transistor | bipolar junction transistor | energy band diagram | energy band diagram | short-channel MOSFET | short-channel MOSFET | device characterization | device characterization | device design | device design | 6.720 | 6.720 | 3.43 | 3.43

License

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6.772 Compound Semiconductor Devices (MIT)

Description

This course outlines the physics, modeling, application, and technology of compound semiconductors (primarily III-Vs) in electronic, optoelectronic, and photonic devices and integrated circuits. Topics include: properties, preparation, and processing of compound semiconductors; theory and practice of heterojunctions, quantum structures, and pseudomorphic strained layers; metal-semiconductor field effect transistors (MESFETs); heterojunction field effect transistors (HFETs) and bipolar transistors (HBTs); photodiodes, vertical-and in-plane-cavity laser diodes, and other optoelectronic devices.

Subjects

physics | modeling | application | technology of compound semiconductors | electronic | optoelectronic | photonic devices | integrated circuits | properties | heterojunctions | quantum structures | pseudomorphic strained layers | metal-semiconductor field effect transistors (MESFETs) | heterojunction field effect transistors (HFETs) | bipolar transistors (HBTs) | photodiodes | laser diodes | optoelectronic devices | applications | compound semiconductors | electronic devices | compound semiconductor processing | metal-semiconductor field effect transistors | MESFET | heterojunction field effect transistors | HFET | bipolar transistors | HBT | vertical-cavity laser diodes | in-plane-cavity laser diodes

License

Content within individual OCW courses is (c) by the individual authors unless otherwise noted. MIT OpenCourseWare materials are licensed by the Massachusetts Institute of Technology under a Creative Commons License (Attribution-NonCommercial-ShareAlike). For further information see https://ocw.mit.edu/terms/index.htm

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6.772 Compound Semiconductor Devices (MIT)

Description

This course outlines the physics, modeling, application, and technology of compound semiconductors (primarily III-Vs) in electronic, optoelectronic, and photonic devices and integrated circuits. Topics include: properties, preparation, and processing of compound semiconductors; theory and practice of heterojunctions, quantum structures, and pseudomorphic strained layers; metal-semiconductor field effect transistors (MESFETs); heterojunction field effect transistors (HFETs) and bipolar transistors (HBTs); photodiodes, vertical-and in-plane-cavity laser diodes, and other optoelectronic devices.

Subjects

physics | modeling | application | technology of compound semiconductors | electronic | optoelectronic | photonic devices | integrated circuits | properties | heterojunctions | quantum structures | pseudomorphic strained layers | metal-semiconductor field effect transistors (MESFETs) | heterojunction field effect transistors (HFETs) | bipolar transistors (HBTs) | photodiodes | laser diodes | optoelectronic devices | applications | compound semiconductors | electronic devices | compound semiconductor processing | metal-semiconductor field effect transistors | MESFET | heterojunction field effect transistors | HFET | bipolar transistors | HBT | vertical-cavity laser diodes | in-plane-cavity laser diodes

License

Content within individual OCW courses is (c) by the individual authors unless otherwise noted. MIT OpenCourseWare materials are licensed by the Massachusetts Institute of Technology under a Creative Commons License (Attribution-NonCommercial-ShareAlike). For further information see https://ocw.mit.edu/terms/index.htm

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3.22 Mechanical Behavior of Materials (MIT) 3.22 Mechanical Behavior of Materials (MIT)

Description

Here we will learn about the mechanical behavior of structures and materials, from the continuum description of properties to the atomistic and molecular mechanisms that confer those properties to all materials. We will cover elastic and plastic deformation, creep, fracture and fatigue of materials including crystalline and amorphous metals, semiconductors, ceramics, and (bio)polymers, and will focus on the design and processing of materials from the atomic to the macroscale to achieve desired mechanical behavior. We will cover special topics in mechanical behavior for material systems of your choice, with reference to current research and publications. Here we will learn about the mechanical behavior of structures and materials, from the continuum description of properties to the atomistic and molecular mechanisms that confer those properties to all materials. We will cover elastic and plastic deformation, creep, fracture and fatigue of materials including crystalline and amorphous metals, semiconductors, ceramics, and (bio)polymers, and will focus on the design and processing of materials from the atomic to the macroscale to achieve desired mechanical behavior. We will cover special topics in mechanical behavior for material systems of your choice, with reference to current research and publications.

Subjects

Phenomenology | Phenomenology | mechanical behavior | mechanical behavior | material structure | material structure | deformation | deformation | failure | failure | elasticity | elasticity | viscoelasticity | viscoelasticity | plasticity | plasticity | creep | creep | fracture | fracture | fatigue | fatigue | metals | metals | semiconductors | semiconductors | ceramics | ceramics | polymers | polymers | microstructure | microstructure | composition | composition | semiconductor diodes | semiconductor diodes | thin films | thin films | carbon nanotubes | carbon nanotubes | battery materials | battery materials | superelastic alloys | superelastic alloys | defect nucleation | defect nucleation | student projects | student projects | viral capsides | viral capsides

License

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3.225 Electronic and Mechanical Properties of Materials (MIT) 3.225 Electronic and Mechanical Properties of Materials (MIT)

Description

This course covers the fundamental concepts that determine the electrical, optical, magnetic and mechanical properties of metals, semiconductors, ceramics and polymers. The roles of bonding, structure (crystalline, defect, energy band and microstructure) and composition in influencing and controlling physical properties are discussed. Also included are case studies drawn from a variety of applications: semiconductor diodes and optical detectors, sensors, thin films, biomaterials, composites and cellular materials, and others. This course covers the fundamental concepts that determine the electrical, optical, magnetic and mechanical properties of metals, semiconductors, ceramics and polymers. The roles of bonding, structure (crystalline, defect, energy band and microstructure) and composition in influencing and controlling physical properties are discussed. Also included are case studies drawn from a variety of applications: semiconductor diodes and optical detectors, sensors, thin films, biomaterials, composites and cellular materials, and others.

Subjects

metals | metals | semiconductors | semiconductors | ceramics | ceramics | polymers | polymers | bonding | bonding | structure | structure | energy band | energy band | microstructure | microstructure | composition | composition | semiconductor diodes | semiconductor diodes | optical detectors | optical detectors | sensors | sensors | thin films | thin films | biomaterials | biomaterials | cellular materials | cellular materials | magnetism | magnetism | polarity | polarity | viscoelasticity | viscoelasticity | plasticity | plasticity | fracture | fracture | materials selection | materials selection

License

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6.012 Microelectronic Devices and Circuits (MIT) 6.012 Microelectronic Devices and Circuits (MIT)

Description

6.012 is the header course for the department's "Devices, Circuits and Systems" concentration. The topics covered include modeling of microelectronic devices, basic microelectronic circuit analysis and design, physical electronics of semiconductor junction and MOS devices, relation of electrical behavior to internal physical processes, development of circuit models, and understanding the uses and limitations of various models. The course uses incremental and large-signal techniques to analyze and design bipolar and field effect transistor circuits, with examples chosen from digital circuits, single-ended and differential linear amplifiers, and other integrated circuits. 6.012 is the header course for the department's "Devices, Circuits and Systems" concentration. The topics covered include modeling of microelectronic devices, basic microelectronic circuit analysis and design, physical electronics of semiconductor junction and MOS devices, relation of electrical behavior to internal physical processes, development of circuit models, and understanding the uses and limitations of various models. The course uses incremental and large-signal techniques to analyze and design bipolar and field effect transistor circuits, with examples chosen from digital circuits, single-ended and differential linear amplifiers, and other integrated circuits.

Subjects

semiconductor | semiconductor | integrated circuit | integrated circuit | p-n junction | p-n junction | mos | mos | mosfet | mosfet | digital logic | digital logic | nmos | nmos | cmos | cmos | bipolar junction transistor | bipolar junction transistor | single stage amplifier | single stage amplifier | frequency domain analysis | frequency domain analysis | common emitter | common emitter | multistage amplifier | multistage amplifier | intrinsic semiconductors | intrinsic semiconductors | electrons | electrons | holes | holes | carrier transport | carrier transport | 60mV rule | 60mV rule

License

Content within individual OCW courses is (c) by the individual authors unless otherwise noted. MIT OpenCourseWare materials are licensed by the Massachusetts Institute of Technology under a Creative Commons License (Attribution-NonCommercial-ShareAlike). For further information see http://ocw.mit.edu/terms/index.htm

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6.012 Microelectronic Devices and Circuits (MIT) 6.012 Microelectronic Devices and Circuits (MIT)

Description

6.012 is the header course for the department's "Devices, Circuits and Systems" concentration. The topics covered include: modeling of microelectronic devices, basic microelectronic circuit analysis and design, physical electronics of semiconductor junction and metal-on-silicon (MOS) devices, relation of electrical behavior to internal physical processes, development of circuit models, and understanding the uses and limitations of various models. The course uses incremental and large-signal techniques to analyze and design bipolar and field effect transistor circuits, with examples chosen from digital circuits, single-ended and differential linear amplifiers, and other integrated circuits. 6.012 is the header course for the department's "Devices, Circuits and Systems" concentration. The topics covered include: modeling of microelectronic devices, basic microelectronic circuit analysis and design, physical electronics of semiconductor junction and metal-on-silicon (MOS) devices, relation of electrical behavior to internal physical processes, development of circuit models, and understanding the uses and limitations of various models. The course uses incremental and large-signal techniques to analyze and design bipolar and field effect transistor circuits, with examples chosen from digital circuits, single-ended and differential linear amplifiers, and other integrated circuits.

Subjects

semiconductor | semiconductor | integrated circuit | integrated circuit | p-n junction | p-n junction | mos | mos | mosfet | mosfet | digital logic | digital logic | nmos | nmos | cmos | cmos | bipolar junction transistor | bipolar junction transistor | single stage amplifier | single stage amplifier | frequency domain analysis | frequency domain analysis | common emitter | common emitter | multistage amplifier | multistage amplifier | intrinsic semiconductors | intrinsic semiconductors | electrons | electrons | holes | holes | carrier transport | carrier transport | 60mV rule | 60mV rule

License

Content within individual OCW courses is (c) by the individual authors unless otherwise noted. MIT OpenCourseWare materials are licensed by the Massachusetts Institute of Technology under a Creative Commons License (Attribution-NonCommercial-ShareAlike). For further information see http://ocw.mit.edu/terms/index.htm

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6.977 Semiconductor Optoelectronics: Theory and Design (MIT) 6.977 Semiconductor Optoelectronics: Theory and Design (MIT)

Description

6.977 focuses on the physics of the interaction of photons with semiconductor materials. The band theory of solids is used to calculate the absorption and gain of semiconductor media. The rate equation formalism is used to develop the concepts of laser threshold, population inversion and modulation response. Matrix methods and coupled mode theory are applied to resonator structures such as distributed feedback lasers, tunable lasers and microring devices. The course is also intended to introduce students to noise models for semiconductor devices and to applications of optoelectronic devices to fiber optic communications. This course is worth 12 Engineering Design points. 6.977 focuses on the physics of the interaction of photons with semiconductor materials. The band theory of solids is used to calculate the absorption and gain of semiconductor media. The rate equation formalism is used to develop the concepts of laser threshold, population inversion and modulation response. Matrix methods and coupled mode theory are applied to resonator structures such as distributed feedback lasers, tunable lasers and microring devices. The course is also intended to introduce students to noise models for semiconductor devices and to applications of optoelectronic devices to fiber optic communications. This course is worth 12 Engineering Design points.

Subjects

semiconductor optoelectronics | semiconductor optoelectronics | photons | photons | semiconductor | semiconductor | band theory of solids | band theory of solids | rate equation formalism | rate equation formalism | laser threshold | laser threshold | population inversion | population inversion | modulation response | modulation response | Matrix methods | Matrix methods | coupled mode theory | coupled mode theory | resonator structures | resonator structures | distributed feedback lasers | distributed feedback lasers | tunable lasers | tunable lasers | microring devices | microring devices | noise models | noise models | optoelectronics | optoelectronics | fiber optic communications | fiber optic communications

License

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3.22 Mechanical Properties of Materials (MIT) 3.22 Mechanical Properties of Materials (MIT)

Description

This course explores the phenomenology of mechanical behavior of materials at the macroscopic level and the relationship of mechanical behavior to material structure and mechanisms of deformation and failure. Topics covered include elasticity, viscoelasticity, plasticity, creep, fracture, and fatigue. Case studies and examples are drawn from structural and functional applications that include a variety of material classes: metals, ceramics, polymers, thin films, composites, and cellular materials. This course explores the phenomenology of mechanical behavior of materials at the macroscopic level and the relationship of mechanical behavior to material structure and mechanisms of deformation and failure. Topics covered include elasticity, viscoelasticity, plasticity, creep, fracture, and fatigue. Case studies and examples are drawn from structural and functional applications that include a variety of material classes: metals, ceramics, polymers, thin films, composites, and cellular materials.

Subjects

metals | metals | semiconductors | semiconductors | ceramics | ceramics | polymers | polymers | bonding | bonding | structure | structure | energy band | energy band | microstructure | microstructure | composition | composition | semiconductor diodes | semiconductor diodes | optical detectors | optical detectors | sensors | sensors | thin films | thin films | biomaterials | biomaterials | cellular materials | cellular materials

License

Content within individual OCW courses is (c) by the individual authors unless otherwise noted. MIT OpenCourseWare materials are licensed by the Massachusetts Institute of Technology under a Creative Commons License (Attribution-NonCommercial-ShareAlike). For further information see http://ocw.mit.edu/terms/index.htm

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3.225 Electronic and Mechanical Properties of Materials (MIT) 3.225 Electronic and Mechanical Properties of Materials (MIT)

Description

Electrical, optical, magnetic, and mechanical properties of metals, semiconductors, ceramics, and polymers. Discussion of roles of bonding, structure (crystalline, defect, energy band, and microstructure), and composition in influencing and controlling physical properties. Case studies drawn from a variety of applications including semiconductor diodes, optical detectors, sensors, thin films, biomaterials, composites, and cellular materials. Electrical, optical, magnetic, and mechanical properties of metals, semiconductors, ceramics, and polymers. Discussion of roles of bonding, structure (crystalline, defect, energy band, and microstructure), and composition in influencing and controlling physical properties. Case studies drawn from a variety of applications including semiconductor diodes, optical detectors, sensors, thin films, biomaterials, composites, and cellular materials.

Subjects

metals | metals | semiconductors | semiconductors | ceramics | ceramics | polymers | polymers | bonding | bonding | energy band | energy band | microstructure | microstructure | composition | composition | semiconductor diodes | semiconductor diodes | optical detectors | optical detectors | sensors | sensors | thin films | thin films | biomaterials | biomaterials | cellular materials | cellular materials

License

Content within individual OCW courses is (c) by the individual authors unless otherwise noted. MIT OpenCourseWare materials are licensed by the Massachusetts Institute of Technology under a Creative Commons License (Attribution-NonCommercial-ShareAlike). For further information see http://ocw.mit.edu/terms/index.htm

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6.720J Integrated Microelectronic Devices (MIT)

Description

6.720 examines the physics of microelectronic semiconductor devices for silicon integrated circuit applications. Topics covered include: semiconductor fundamentals, p-n junction, metal-oxide semiconductor structure, metal-semiconductor junction, MOS field-effect transistor, and bipolar junction transistor. The course emphasizes physical understanding of device operation through energy band diagrams and short-channel MOSFET device design. Issues in modern device scaling are also outlined. The course is worth 2 Engineering Design Points.

Subjects

integrated microelectronic devices | physics | silicon | circuit | semiconductor | p-n junction | metal-oxide semiconductor structure | metal-semiconductor junction | MOS field-effect transistor | bipolar junction transistor | energy band diagram | short-channel MOSFET | device characterization | device design | 6.720 | 3.43

License

Content within individual OCW courses is (c) by the individual authors unless otherwise noted. MIT OpenCourseWare materials are licensed by the Massachusetts Institute of Technology under a Creative Commons License (Attribution-NonCommercial-ShareAlike). For further information see https://ocw.mit.edu/terms/index.htm

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6.720J Integrated Microelectronic Devices (MIT)

Description

6.720 examines the physics of microelectronic semiconductor devices for silicon integrated circuit applications. Topics covered include: semiconductor fundamentals, p-n junction, metal-oxide semiconductor structure, metal-semiconductor junction, MOS field-effect transistor, and bipolar junction transistor. The course emphasizes physical understanding of device operation through energy band diagrams and short-channel MOSFET device design. Issues in modern device scaling are also outlined. The course is worth 2 Engineering Design Points. Acknowledgments Prof. Jess del Alamo would like to thank Prof. Harry Tuller for his support of and help in teaching the course.

Subjects

integrated microelectronic devices | physics | silicon | circuit | semiconductor | p-n junction | metal-oxide semiconductor structure | metal-semiconductor junction | MOS field-effect transistor | bipolar junction transistor | energy band diagram | short-channel MOSFET | device characterization | device design

License

Content within individual OCW courses is (c) by the individual authors unless otherwise noted. MIT OpenCourseWare materials are licensed by the Massachusetts Institute of Technology under a Creative Commons License (Attribution-NonCommercial-ShareAlike). For further information see https://ocw.mit.edu/terms/index.htm

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6.720J Integrated Microelectronic Devices (MIT)

Description

6.720 examines the physics of microelectronic semiconductor devices for silicon integrated circuit applications. Topics covered include: semiconductor fundamentals, p-n junction, metal-oxide semiconductor structure, metal-semiconductor junction, MOS field-effect transistor, and bipolar junction transistor. The course emphasizes physical understanding of device operation through energy band diagrams and short-channel MOSFET device design. Issues in modern device scaling are also outlined. The course is worth 2 Engineering Design Points. Acknowledgments Prof. Jess del Alamo would like to thank Prof. Harry Tuller for his support of and help in teaching the course.

Subjects

integrated microelectronic devices | physics | silicon | circuit | semiconductor | p-n junction | metal-oxide semiconductor structure | metal-semiconductor junction | MOS field-effect transistor | bipolar junction transistor | energy band diagram | short-channel MOSFET | device characterization | device design

License

Content within individual OCW courses is (c) by the individual authors unless otherwise noted. MIT OpenCourseWare materials are licensed by the Massachusetts Institute of Technology under a Creative Commons License (Attribution-NonCommercial-ShareAlike). For further information see https://ocw.mit.edu/terms/index.htm

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6.012 Microelectronic Devices and Circuits (MIT)

Description

6.012 is the header course for the department's "Devices, Circuits and Systems" concentration. The topics covered include modeling of microelectronic devices, basic microelectronic circuit analysis and design, physical electronics of semiconductor junction and MOS devices, relation of electrical behavior to internal physical processes, development of circuit models, and understanding the uses and limitations of various models. The course uses incremental and large-signal techniques to analyze and design bipolar and field effect transistor circuits, with examples chosen from digital circuits, single-ended and differential linear amplifiers, and other integrated circuits.

Subjects

semiconductor | integrated circuit | p-n junction | mos | mosfet | digital logic | nmos | cmos | bipolar junction transistor | single stage amplifier | frequency domain analysis | common emitter | multistage amplifier | intrinsic semiconductors | electrons | holes | carrier transport | 60mV rule

License

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3.23 Electrical, Optical, and Magnetic Properties of Materials (MIT) 3.23 Electrical, Optical, and Magnetic Properties of Materials (MIT)

Description

This class discusses the origin of electrical, magnetic and optical properties of materials, with a focus on the acquisition of quantum mechanical tools. It begins with an analysis of the properties of materials, presentation of the postulates of quantum mechanics, and close examination of the hydrogen atom, simple molecules and bonds, and the behavior of electrons in solids and energy bands. Introducing the variation principle as a method for the calculation of wavefunctions, the course continues with investigation of how and why materials respond to different electrical, magnetic and electromagnetic fields and probes and study of the conductivity, dielectric function, and magnetic permeability in metals, semiconductors, and insulators. A survey of common devices such as transistors, magn This class discusses the origin of electrical, magnetic and optical properties of materials, with a focus on the acquisition of quantum mechanical tools. It begins with an analysis of the properties of materials, presentation of the postulates of quantum mechanics, and close examination of the hydrogen atom, simple molecules and bonds, and the behavior of electrons in solids and energy bands. Introducing the variation principle as a method for the calculation of wavefunctions, the course continues with investigation of how and why materials respond to different electrical, magnetic and electromagnetic fields and probes and study of the conductivity, dielectric function, and magnetic permeability in metals, semiconductors, and insulators. A survey of common devices such as transistors, magn

Subjects

quantum mechanics | quantum mechanics | functional materials | functional materials | magnetic domains | magnetic domains | particle wells | particle wells | spintronics | spintronics | semiconductor engineering | semiconductor engineering | p-n junction | p-n junction | luminescence | luminescence | nanoparticles | nanoparticles | phonons | phonons

License

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6.002 Circuits and Electronics (MIT) 6.002 Circuits and Electronics (MIT)

Description

6.002 introduces the fundamentals of the lumped circuit abstraction. Topics covered include: resistive elements and networks; independent and dependent sources; switches and MOS transistors; digital abstraction; amplifiers; energy storage elements; dynamics of first- and second-order networks; design in the time and frequency domains; and analog and digital circuits and applications. Design and lab exercises are also significant components of the course. 6.002 is worth 4 Engineering Design Points. 6.002 introduces the fundamentals of the lumped circuit abstraction. Topics covered include: resistive elements and networks; independent and dependent sources; switches and MOS transistors; digital abstraction; amplifiers; energy storage elements; dynamics of first- and second-order networks; design in the time and frequency domains; and analog and digital circuits and applications. Design and lab exercises are also significant components of the course. 6.002 is worth 4 Engineering Design Points.

Subjects

circuit | circuit | electronic | electronic | abstraction | abstraction | lumped circuit | lumped circuit | digital | digital | amplifier | amplifier | differential equations | differential equations | time behavior | time behavior | energy storage | energy storage | semiconductor diode | semiconductor diode | field-effect | field-effect | field-effect transistor | field-effect transistor | resistor | resistor | source | source | inductor | inductor | capacitor | capacitor | diode | diode | series-parallel reduction | series-parallel reduction | voltage | voltage | current divider | current divider | node method | node method | linearity | linearity | superposition | superposition | Thevenin-Norton equivalent | Thevenin-Norton equivalent | power flow | power flow | Boolean algebra | Boolean algebra | binary signal | binary signal | MOSFET | MOSFET | noise margin | noise margin | singularity functions | singularity functions | sinusoidal-steady-state | sinusoidal-steady-state | impedance | impedance | frequency response curves | frequency response curves | operational amplifier | operational amplifier | Op-Amp | Op-Amp | negative feedback | negative feedback | positive feedback | positive feedback

License

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2.830J Control of Manufacturing Processes (SMA 6303) (MIT) 2.830J Control of Manufacturing Processes (SMA 6303) (MIT)

Description

Includes audio/video content: AV special element video, AV lectures. This course explores statistical modeling and control in manufacturing processes. Topics include the use of experimental design and response surface modeling to understand manufacturing process physics, as well as defect and parametric yield modeling and optimization. Various forms of process control, including statistical process control, run by run and adaptive control, and real-time feedback control, are covered. Application contexts include semiconductor manufacturing, conventional metal and polymer processing, and emerging micro-nano manufacturing processes. Includes audio/video content: AV special element video, AV lectures. This course explores statistical modeling and control in manufacturing processes. Topics include the use of experimental design and response surface modeling to understand manufacturing process physics, as well as defect and parametric yield modeling and optimization. Various forms of process control, including statistical process control, run by run and adaptive control, and real-time feedback control, are covered. Application contexts include semiconductor manufacturing, conventional metal and polymer processing, and emerging micro-nano manufacturing processes.

Subjects

2.830 | 2.830 | 6.780 | 6.780 | ESD.63 | ESD.63 | Process control | Process control | manufacturing process | manufacturing process | discrete system feedback control theory | discrete system feedback control theory | empirical and adaptive modeling | empirical and adaptive modeling | off-line optimization | off-line optimization | statistical process control | statistical process control | real-time control. | real-time control. | real-time control | real-time control | one-factor-at-a-time | one-factor-at-a-time | robustness | robustness | Shewhart Hypothesis | Shewhart Hypothesis | semiconductor manufacturing | semiconductor manufacturing

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3.024 Electronic, Optical and Magnetic Properties of Materials (MIT) 3.024 Electronic, Optical and Magnetic Properties of Materials (MIT)

Description

This course describes how electronic, optical and magnetic properties of materials originate from their electronic and molecular structure and how these properties can be designed for particular applications. It offers experimental exploration of the electronic, optical and magnetic properties of materials through hands-on experimentation and practical materials examples. This course describes how electronic, optical and magnetic properties of materials originate from their electronic and molecular structure and how these properties can be designed for particular applications. It offers experimental exploration of the electronic, optical and magnetic properties of materials through hands-on experimentation and practical materials examples.

Subjects

electronic properites | electronic properites | optical properties | optical properties | magnetic properties | magnetic properties | materials | materials | Hamilton approach | Hamilton approach | Schrödinger’s Equation | Schrödinger’s Equation | mechanics | mechanics | quantum mechanics | quantum mechanics | spectral decomposition | spectral decomposition | symmetries | symmetries | angular momentum | angular momentum | periodic potentials | periodic potentials | band diagrams | band diagrams | Fermi | Fermi | Fermi-Dirac | Fermi-Dirac | p-n junction | p-n junction | light emitting diodes | light emitting diodes | wave optics | wave optics | electromagnetic waves | electromagnetic waves | magnetization | magnetization | semiconductor devices | semiconductor devices | Maxwell's equations | Maxwell's equations | photonic bands | photonic bands

License

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8.231 Physics of Solids I (MIT) 8.231 Physics of Solids I (MIT)

Description

The topics covered in this course include:Periodic Structure and Symmetry of CrystalsDiffraction, Reciprocal LatticeChemical BondingLattice DynamicsPhononsThermal PropertiesFree Electron GasModel of MetalsBloch Theorem and Band StructureNearly Free Electron ApproximationTight Binding MethodFermi SurfaceSemiconductorsElectronsHolesImpuritiesOptical PropertiesExcitons andMagnetism The topics covered in this course include:Periodic Structure and Symmetry of CrystalsDiffraction, Reciprocal LatticeChemical BondingLattice DynamicsPhononsThermal PropertiesFree Electron GasModel of MetalsBloch Theorem and Band StructureNearly Free Electron ApproximationTight Binding MethodFermi SurfaceSemiconductorsElectronsHolesImpuritiesOptical PropertiesExcitons andMagnetism

Subjects

periodic structure and symmetry of crystals | periodic structure and symmetry of crystals | diffraction | diffraction | reciprocal lattice | reciprocal lattice | chemical bonding | chemical bonding | phonons | phonons | thermal properties | thermal properties | free electron gas | free electron gas | model of metals | model of metals | Bloch theorem and band structure | Bloch theorem and band structure | nearly free electron approximation | nearly free electron approximation | tight binding method | tight binding method | Fermi surface | Fermi surface | semiconductors | semiconductors | electrons | electrons | holes | holes | impurities | impurities | optical properties | optical properties | excitons | excitons | magnetism | magnetism

License

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8.231 Physics of Solids I (MIT) 8.231 Physics of Solids I (MIT)

Description

This course offers an introduction to the basic concepts of the quantum theory of solids. This course offers an introduction to the basic concepts of the quantum theory of solids.

Subjects

periodic structure | periodic structure | symmetry of crystals | symmetry of crystals | diffraction | diffraction | reciprocal lattice | reciprocal lattice | chemical bonding | chemical bonding | lattice dynamics | lattice dynamics | phonons | phonons | thermal properties | thermal properties | free electron gas | free electron gas | model of metals | model of metals | Bloch theorem | Bloch theorem | band structure | band structure | nearly free electron approximation | nearly free electron approximation | tight binding method | tight binding method | Fermi surface | Fermi surface | semiconductors | semiconductors | electrons | electrons | holes | holes | impurities | impurities | optical properties | optical properties | excitons | excitons | magnetism. | magnetism.

License

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6.012 Microelectronic Devices and Circuits (MIT)

Description

6.012 is the header course for the department's "Devices, Circuits and Systems" concentration. The topics covered include: modeling of microelectronic devices, basic microelectronic circuit analysis and design, physical electronics of semiconductor junction and metal-on-silicon (MOS) devices, relation of electrical behavior to internal physical processes, development of circuit models, and understanding the uses and limitations of various models. The course uses incremental and large-signal techniques to analyze and design bipolar and field effect transistor circuits, with examples chosen from digital circuits, single-ended and differential linear amplifiers, and other integrated circuits.

Subjects

semiconductor | integrated circuit | p-n junction | mos | mosfet | digital logic | nmos | cmos | bipolar junction transistor | single stage amplifier | frequency domain analysis | common emitter | multistage amplifier | intrinsic semiconductors | electrons | holes | carrier transport | 60mV rule

License

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3.22 Mechanical Properties of Materials (MIT)

Description

This course explores the phenomenology of mechanical behavior of materials at the macroscopic level and the relationship of mechanical behavior to material structure and mechanisms of deformation and failure. Topics covered include elasticity, viscoelasticity, plasticity, creep, fracture, and fatigue. Case studies and examples are drawn from structural and functional applications that include a variety of material classes: metals, ceramics, polymers, thin films, composites, and cellular materials.

Subjects

metals | semiconductors | ceramics | polymers | bonding | structure | energy band | microstructure | composition | semiconductor diodes | optical detectors | sensors | thin films | biomaterials | cellular materials

License

Content within individual OCW courses is (c) by the individual authors unless otherwise noted. MIT OpenCourseWare materials are licensed by the Massachusetts Institute of Technology under a Creative Commons License (Attribution-NonCommercial-ShareAlike). For further information see https://ocw.mit.edu/terms/index.htm

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6.012 Microelectronic Devices and Circuits (MIT) 6.012 Microelectronic Devices and Circuits (MIT)

Description

6.012 is the header course for the department's "Devices, Circuits and Systems" concentration. The topics covered include: modeling of microelectronic devices, basic microelectronic circuit analysis and design, physical electronics of semiconductor junction and MOS devices, relation of electrical behavior to internal physical processes, development of circuit models, and understanding the uses and limitations of various models. The course uses incremental and large-signal techniques to analyze and design bipolar and field effect transistor circuits, with examples chosen from digital circuits, single-ended and differential linear amplifiers, and other integrated circuits. This course is worth 4 Engineering Design Points. 6.012 is the header course for the department's "Devices, Circuits and Systems" concentration. The topics covered include: modeling of microelectronic devices, basic microelectronic circuit analysis and design, physical electronics of semiconductor junction and MOS devices, relation of electrical behavior to internal physical processes, development of circuit models, and understanding the uses and limitations of various models. The course uses incremental and large-signal techniques to analyze and design bipolar and field effect transistor circuits, with examples chosen from digital circuits, single-ended and differential linear amplifiers, and other integrated circuits. This course is worth 4 Engineering Design Points.

Subjects

microelectronic device | microelectronic device | circuit | circuit | design | design | physical electronics | physical electronics | semiconductor junction | semiconductor junction | MOS device | MOS device | electrical behavior | electrical behavior | incremental technique | incremental technique | large-signal technique | large-signal technique | bipolar transistor | bipolar transistor | field effect transistor | field effect transistor | digital circuit | digital circuit | single-ended amplifier | single-ended amplifier | differential linear amplifier | differential linear amplifier | integrated circuit | integrated circuit

License

Content within individual OCW courses is (c) by the individual authors unless otherwise noted. MIT OpenCourseWare materials are licensed by the Massachusetts Institute of Technology under a Creative Commons License (Attribution-NonCommercial-ShareAlike). For further information see http://ocw.mit.edu/terms/index.htm

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