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Silicon Nitride-bonded Silicon Carbide

Description

Silicon Nitride bonded Silicon Carbide is characterized by excellent wear properties, good resistance to high temperatures, good impact resistance, an ability to be easily cast, and good corrosion resistance.

Subjects

ceramic | silicon carbide | silicon nitride | doitpoms | university of cambridge | micrograph | corematerials | ukoer | Engineering | H000

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Silicon Carbide from within a Silicon Nitride-bonded Silicon Carbide sample

Description

Silicon Nitride bonded Silicon Carbide is characterized by excellent wear properties, good resistance to high temperatures, good impact resistance, an ability to be easily cast, and good corrosion resistance.

Subjects

ceramic | silicon carbide | silicon nitride | doitpoms | university of cambridge | micrograph | corematerials | ukoer | Engineering | H000

License

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ía II (2010) ía II (2010)

Description

La asignatura Contactología II pretende dotar al alumno de una serie de conocimientos y capacidades que le permiten adaptar por sí mismo las lentes de contacto de uso más común en la práctica de la Contactología, para lo cuál deberá tener unos conocimientos básicos, teóricos y prácticos, sobre las lentes de contacto de uso mas común en la práctica actual, sus propiedades y características, así como de los métodos de limpieza y mantenimiento de las mismas, del mismo modo el alumno deberá saber como evaluar y detectar ametropías. Todos estos conocimientos se imparten en diversas asignaturas de cursos anteriores. El alumno debe saber además: detectar las necesidades de los pacientes, conocer los diferentes tipos de adaptación, seleccionar la técnica más adecuada en cada La asignatura Contactología II pretende dotar al alumno de una serie de conocimientos y capacidades que le permiten adaptar por sí mismo las lentes de contacto de uso más común en la práctica de la Contactología, para lo cuál deberá tener unos conocimientos básicos, teóricos y prácticos, sobre las lentes de contacto de uso mas común en la práctica actual, sus propiedades y características, así como de los métodos de limpieza y mantenimiento de las mismas, del mismo modo el alumno deberá saber como evaluar y detectar ametropías. Todos estos conocimientos se imparten en diversas asignaturas de cursos anteriores. El alumno debe saber además: detectar las necesidades de los pacientes, conocer los diferentes tipos de adaptación, seleccionar la técnica más adecuada en cada

Subjects

ígidas gas permeables | ígidas gas permeables | lentes para presbicia | lentes para presbicia | ílicas | ílicas | lentes de hidrogel de silicona | lentes de hidrogel de silicona | lentes para queratocono | lentes para queratocono | Optica | Optica | ón de lentes de contacto | ón de lentes de contacto | ía | ía

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Delamination cracks in h-BN particles.

Description

h-BN particles were subjected to compressive stress in the (0001) planes (within a silicon nitride particulate-reinforced silicon carbide composite). The occurrence of BN inclusions results from the introduction of colloidal BN into the hot isostatic pressing process. They are formed from B2O3 present as a thin surface film on the BN particles in the barrier layer. B2O3 will be molten during the pressing process and will diffuse rapidly into the powder compact and react with Si3N4 to form BN. Such inclusions can be related to failure under thermal cycling or creep test conditions (due to cavities and microcracks associated with them), may be grain growth controllers, and may influence crack deflection and slow crack growth at high temperatures. Delamination cracks probably originate during

Subjects

boron nitride | ceramic | composite material | silicon carbide | silicon nitride | doitpoms | university of cambridge | micrograph | corematerials | ukoer | Engineering | H000

License

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h-BN inclusion in a β-Si3N4 grain

Description

The micrograph shows h-BN inclusion (precipitate) in a β-Si3N4 grain (within a silicon nitride particulate-reinforced silicon carbide composite). The occurrence of BN inclusions results from the introduction of colloidal BN into the hot isostatic pressing process. They are formed from B2O3 present as a thin surface film on the BN particles in the barrier layer. B2O3 will be molten during the pressing process and will diffuse rapidly into the powder compact and react with Si3N4 to form BN. Such inclusions can be related to failure under thermal cycling or creep test conditions (due to cavities and microcracks associated with them), may be grain growth controllers, and may influence crack deflection and slow crack growth at high temperatures.

Subjects

boron nitride | ceramic | composite material | silicon carbide | silicon nitride | doitpoms | university of cambridge | micrograph | corematerials | ukoer | Engineering | H000

License

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Misoriented interphase boundary between h-BN and SiC grains

Description

The micrograph shows misoriented interphase boundary between h-BN (precipitate) and SiC grains (within a silicon nitride particulate-reinforced silicon carbide composite). The occurrence of BN inclusions results from the introduction of colloidal BN into the hot isostatic pressing process. They are formed from B2O3 present as a thin surface film on the BN particles in the barrier layer. B2O3 will be molten during the pressing process and will diffuse rapidly into the powder compact and react with Si3N4 to form BN. Such inclusions can be related to failure under thermal cycling or creep test conditions (due to cavities and microcracks associated with them), may be grain growth controllers, and may influence crack deflection and slow crack growth at high temperatures.

Subjects

boron nitride | ceramic | composite material | silicon carbide | silicon nitride | doitpoms | university of cambridge | micrograph | corematerials | ukoer | Engineering | H000

License

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3.012 Fundamentals of Materials Science (MIT) 3.012 Fundamentals of Materials Science (MIT)

Description

This subject describes the fundamentals of bonding, energetics, and structure that underpin materials science. From electrons to silicon to DNA: the role of electronic bonding in determining the energy, structure, and stability of materials. Quantum mechanical descriptions of interacting electrons and atoms. Symmetry properties of molecules and solids. Structure of complex and disordered materials. Introduction to thermodynamic functions and laws governing equilibrium properties, relating macroscopic behavior to molecular models of materials. Develops basis for understanding a broad range of materials phenomena, from heat capacities, phase transformations, and multiphase equilibria to chemical reactions and magnetism. Fundamentals are taught using real-world examples such as engineered all This subject describes the fundamentals of bonding, energetics, and structure that underpin materials science. From electrons to silicon to DNA: the role of electronic bonding in determining the energy, structure, and stability of materials. Quantum mechanical descriptions of interacting electrons and atoms. Symmetry properties of molecules and solids. Structure of complex and disordered materials. Introduction to thermodynamic functions and laws governing equilibrium properties, relating macroscopic behavior to molecular models of materials. Develops basis for understanding a broad range of materials phenomena, from heat capacities, phase transformations, and multiphase equilibria to chemical reactions and magnetism. Fundamentals are taught using real-world examples such as engineered all

Subjects

fundamentals of bonding | energetics | and structure | fundamentals of bonding | energetics | and structure | Quantum mechanical descriptions of interacting electrons and atoms | Quantum mechanical descriptions of interacting electrons and atoms | Symmetry properties of molecules and solids | Symmetry properties of molecules and solids | complex and disordered materials | complex and disordered materials | thermodynamic functions | thermodynamic functions | equilibrium properties | equilibrium properties | macroscopic behavior | macroscopic behavior | molecular models | molecular models | heat capacities | heat capacities | phase transformations | phase transformations | multiphase equilibria | multiphase equilibria | chemical reactions | chemical reactions | magnetism | magnetism | engineered alloys | engineered alloys | electronic and magnetic materials | electronic and magnetic materials | ionic and network solids | ionic and network solids | polymers | polymers | biomaterials | biomaterials | energetics | energetics | structure | structure | materials science | materials science | electrons | electrons | silicon | silicon | DNA | DNA | electronic bonding | electronic bonding | energy | energy | stability | stability | quantum mechanics | quantum mechanics | atoms | atoms | interactions | interactions | symmetry | symmetry | molecules | molecules | solids | solids | complex material | complex material | disorderd materials | disorderd materials | thermodynamic laws | thermodynamic laws | electronic materials | electronic materials | magnetic materials | magnetic materials | ionic solids | ionic solids | network solids | network solids | statistical mechanics | statistical mechanics | microstates | microstates | microscopic complexity | microscopic complexity | entropy | entropy

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Content within individual OCW courses is (c) by the individual authors unless otherwise noted. MIT OpenCourseWare materials are licensed by the Massachusetts Institute of Technology under a Creative Commons License (Attribution-NonCommercial-ShareAlike). For further information see http://ocw.mit.edu/terms/index.htm

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10 Billion bits of Entanglement Achieved in Silicon

Description

Scientists from Oxford University have made a significant step towards an ultrafast quantum computer by successfully generating 10 billion bits of quantum entanglement in silicon for the first time. This podcast explains how. Wales; http://creativecommons.org/licenses/by-nc-sa/2.0/uk/

Subjects

science | quantum mechanics | silicon | quantum | materials | entanglement | science | quantum mechanics | silicon | quantum | materials | entanglement

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Interface boundary between h-BN and Si3N4 grains

Description

The micrograph shows a regularly stepped interface boundary between h-BN (precipitate) and Si3N4 grains (within a silicon nitride particulate-reinforced silicon carbide composite). The occurrence of BN inclusions results from the introduction of colloidal BN into the hot isostatic pressing process. They are formed from B2O3 present as a thin surface film on the BN particles in the barrier layer. B2O3 will be molten during the pressing process and will diffuse rapidly into the powder compact and react with Si3N4 to form BN. Such inclusions can be related to failure under thermal cycling or creep test conditions (due to cavities and microcracks associated with them), may be grain growth controllers, and may influence crack deflection and slow crack growth at high temperatures.

Subjects

boron nitride | ceramic | composite material | silicon carbide | silicon nitride | doitpoms | university of cambridge | micrograph | corematerials | ukoer | Engineering | H000

License

Attribution-Noncommercial-Share Alike 2.0 UK: England & Wales Attribution-Noncommercial-Share Alike 2.0 UK: England & Wales http://creativecommons.org/licenses/by-nc-sa/2.0/uk/ http://creativecommons.org/licenses/by-nc-sa/2.0/uk/

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An amorphous phase trapped at a triple junction between Si3N4 grains

Description

The micrograph shows an amorphous phase trapped at a triple junction between Si3N4 grains (within a silicon nitride particulate-reinforced silicon carbide composite). The amorphous phase extends into at least one of the grain boundaries with a thickness of about 10 angstrom.

Subjects

ceramic | composite material | silicon carbide | silicon nitride | doitpoms | university of cambridge | micrograph | corematerials | ukoer | Engineering | H000

License

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6.774 Physics of Microfabrication: Front End Processing (MIT) 6.774 Physics of Microfabrication: Front End Processing (MIT)

Description

Includes audio/video content: AV lectures. This course is offered to graduates and focuses on understanding the fundamental principles of the "front-end" processes used in the fabrication of devices for silicon integrated circuits. This includes advanced physical models and practical aspects of major processes, such as oxidation, diffusion, ion implantation, and epitaxy. Other topics covered include: high performance MOS and bipolar devices including ultra-thin gate oxides, implant-damage enhanced diffusion, advanced metrology, and new materials such as Silicon Germanium (SiGe). Includes audio/video content: AV lectures. This course is offered to graduates and focuses on understanding the fundamental principles of the "front-end" processes used in the fabrication of devices for silicon integrated circuits. This includes advanced physical models and practical aspects of major processes, such as oxidation, diffusion, ion implantation, and epitaxy. Other topics covered include: high performance MOS and bipolar devices including ultra-thin gate oxides, implant-damage enhanced diffusion, advanced metrology, and new materials such as Silicon Germanium (SiGe).

Subjects

fabrication processes | fabrication processes | silicon | silicon | integrated circuits | integrated circuits | monolithic integrated circuits | monolithic integrated circuits | physical models | physical models | bulk crystal growth | bulk crystal growth | thermal oxidation | thermal oxidation | solid-state diffusion | solid-state diffusion | ion implantation | ion implantation | epitaxial deposition | epitaxial deposition | chemical vapor deposition | chemical vapor deposition | physical vapor deposition | physical vapor deposition | refractory metal silicides | refractory metal silicides | plasma and reactive ion etching | plasma and reactive ion etching | rapid thermal processing | rapid thermal processing | process modeling | process modeling | process simulation | process simulation | technological limitations | technological limitations | integrated circuit design | integrated circuit design | integrated circuit fabrication | integrated circuit fabrication | device operation | device operation | sige materials | sige materials | processing | processing

License

Content within individual OCW courses is (c) by the individual authors unless otherwise noted. MIT OpenCourseWare materials are licensed by the Massachusetts Institute of Technology under a Creative Commons License (Attribution-NonCommercial-ShareAlike). For further information see http://ocw.mit.edu/terms/index.htm

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Crystalline triple junction between SiC grains

Description

The micrograph shows part of a crystalline triple junction between SiC grains (within a silicon nitride particulate-reinforced silicon carbide composite).

Subjects

ceramic | composite material | silicon carbide | silicon nitride | doitpoms | university of cambridge | micrograph | corematerials | ukoer | Engineering | H000

License

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TALAT Lecture 1501: Properties, Characteristics and Alloys of Aluminium

Description

This lecture provides a survey of the aluminium alloys available to the user; it describes their various properties; it gives an insight into the choice of aluminium for a proposed application. In the context of this lecture not every individual alloy and its properties have been treated in detail, but rather divided into alloy types with reference to the most commonly used alloys. For further details on alloy properties the reader is referred to available databanks like ALUSELECT of the European Aluminium Association (EAA) or to the European and national materials standards. Good engineering background in materials, design and manufacturing processes is assumed.

Subjects

aluminium | aluminum | european aluminium association | EAA | Training in Aluminium Application Technologies | training | metallurgy | technology | lecture | properties | selection criteria | production | industry | recycled aluminium | secondary aluminium | atomic structure | crystal structure | density | electrical conductivity | resistivity | thermal conductivity | reflectance | non-magnetic | emissivity | corrosion resistance | thermal expansion | melting temperature | latent heat | specific heat | identification | aluminium - copper alloys | aluminium - manganese alloys | aluminium - silicon alloys | aluminium - magnesium alloys | aluminium - magnesium - silicon alloys | aluminium - zinc - magnesium alloys | aluminium - zinc - magnesium - copper alloys | ingot | casting | work hardening | dispersion hardening | solid solution hardening | precipitation hardening | temper designations | non heat-treatable alloys | heat-treatable alloys | applications | mechanical properties | tensile strength | strength/weight ratio | proof stress | elastic properties | elongation | compression | bearing | shear | hardness | ductility | creep | impact strength | elevated temperatures | low temperatures | fracture characteristics | fatigue | corematerials | ukoer

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Silicon Nitride-bonded Silicon Carbide

Description

Silicon Nitride bonded Silicon Carbide is characterized by excellent wear properties, good resistance to high temperatures, good impact resistance, an ability to be easily cast, and good corrosion resistance.

Subjects

ceramic | silicon carbide | silicon nitride | DoITPoMS | University of Cambridge | micrograph | corematerials | ukoer

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Silicon Carbide from within a Silicon Nitride-bonded Silicon Carbide sample

Description

Silicon Nitride bonded Silicon Carbide is characterized by excellent wear properties, good resistance to high temperatures, good impact resistance, an ability to be easily cast, and good corrosion resistance.

Subjects

ceramic | silicon carbide | silicon nitride | DoITPoMS | University of Cambridge | micrograph | corematerials | ukoer

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ógicos I (2014) ógicos I (2014)

Description

Para definir las dos palabras que dan nombre a esta asignatura recurrimos al diccionario. En él encontramos que una de las acepciones de "material" es, elemento con el cual se hace una obra o se ejerce una profesión. Por lo que se refiere a "dental" significa, relativo a los dientes. Uniendo ambos términos podemos decir que "Materiales dentales" son los elementos necesarios para ejercer la profesión relativa a los dientes, o sea, para ejercer la Odontología. Diversas especialidades de la química y prácticamente todas las ciencias aplicadas de la ingeniería han contribuido a la formación de esta disciplina. El medio biológico se tornará el determinante para el uso de los materiales. Hemos dividido la asignatura en cinco partes. En la primera tratamos los fundamentos de lo Para definir las dos palabras que dan nombre a esta asignatura recurrimos al diccionario. En él encontramos que una de las acepciones de "material" es, elemento con el cual se hace una obra o se ejerce una profesión. Por lo que se refiere a "dental" significa, relativo a los dientes. Uniendo ambos términos podemos decir que "Materiales dentales" son los elementos necesarios para ejercer la profesión relativa a los dientes, o sea, para ejercer la Odontología. Diversas especialidades de la química y prácticamente todas las ciencias aplicadas de la ingeniería han contribuido a la formación de esta disciplina. El medio biológico se tornará el determinante para el uso de los materiales. Hemos dividido la asignatura en cinco partes. En la primera tratamos los fundamentos de lo

Subjects

yeso | yeso | revestimiento | revestimiento | hidrocoloides | hidrocoloides | ía dental y maxilofacial | ía dental y maxilofacial | ía | ía | ímicas | ímicas | éutica dental | éutica dental | ísicas | ísicas | ótesis Dental | ótesis Dental | éter | éter | siliconas | siliconas | Medicina Legal y Forense | Medicina Legal y Forense | ánicas | ánicas | ceras | ceras | ólica | ólica | godiva | godiva | polisulfuros | polisulfuros

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6.720J Integrated Microelectronic Devices (MIT) 6.720J Integrated Microelectronic Devices (MIT)

Description

6.720 examines the physics of microelectronic semiconductor devices for silicon integrated circuit applications. Topics covered include: semiconductor fundamentals, p-n junction, metal-oxide semiconductor structure, metal-semiconductor junction, MOS field-effect transistor, and bipolar junction transistor. The course emphasizes physical understanding of device operation through energy band diagrams and short-channel MOSFET device design. Issues in modern device scaling are also outlined. The course is worth 2 Engineering Design Points. Acknowledgments Prof. Jesús del Alamo would like to thank Prof. Harry Tuller for his support of and help in teaching the course. 6.720 examines the physics of microelectronic semiconductor devices for silicon integrated circuit applications. Topics covered include: semiconductor fundamentals, p-n junction, metal-oxide semiconductor structure, metal-semiconductor junction, MOS field-effect transistor, and bipolar junction transistor. The course emphasizes physical understanding of device operation through energy band diagrams and short-channel MOSFET device design. Issues in modern device scaling are also outlined. The course is worth 2 Engineering Design Points. Acknowledgments Prof. Jesús del Alamo would like to thank Prof. Harry Tuller for his support of and help in teaching the course.

Subjects

integrated microelectronic devices | integrated microelectronic devices | physics | physics | silicon | silicon | circuit | circuit | semiconductor | semiconductor | p-n junction | p-n junction | metal-oxide semiconductor structure | metal-oxide semiconductor structure | metal-semiconductor junction | metal-semiconductor junction | MOS field-effect transistor | MOS field-effect transistor | bipolar junction transistor | bipolar junction transistor | energy band diagram | energy band diagram | short-channel MOSFET | short-channel MOSFET | device characterization | device characterization | device design | device design

License

Content within individual OCW courses is (c) by the individual authors unless otherwise noted. MIT OpenCourseWare materials are licensed by the Massachusetts Institute of Technology under a Creative Commons License (Attribution-NonCommercial-ShareAlike). For further information see http://ocw.mit.edu/terms/index.htm

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10 Billion bits of Entanglement Achieved in Silicon

Description

Scientists from Oxford University have made a significant step towards an ultrafast quantum computer by successfully generating 10 billion bits of quantum entanglement in silicon for the first time. This podcast explains how. Wales; http://creativecommons.org/licenses/by-nc-sa/2.0/uk/

Subjects

science | quantum mechanics | silicon | quantum | materials | entanglement | science | quantum mechanics | silicon | quantum | materials | entanglement

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10.467 Polymer Science Laboratory (MIT) 10.467 Polymer Science Laboratory (MIT)

Description

Experiments in this class are broadly aimed at acquainting students with the range of properties of polymers, methods of synthesis, and physical chemistry. Some examples of laboratory work include solution polymerization of acrylamide, bead polymerization of divinylbenzene, and interfacial polymerization of nylon 6,10. Evaluation of networks by tensile and swelling experiments, rheology of polymer solutions and suspensions, and physical properties of natural and silicone rubber are also covered. Experiments in this class are broadly aimed at acquainting students with the range of properties of polymers, methods of synthesis, and physical chemistry. Some examples of laboratory work include solution polymerization of acrylamide, bead polymerization of divinylbenzene, and interfacial polymerization of nylon 6,10. Evaluation of networks by tensile and swelling experiments, rheology of polymer solutions and suspensions, and physical properties of natural and silicone rubber are also covered.

Subjects

polymers | polymers | polymer laboratory | polymer laboratory | polymer experiments | polymer experiments | properties of polymers | properties of polymers | methods of polymer synthesis | methods of polymer synthesis | physical chemistry | physical chemistry | solution polymerization of acrylamide | solution polymerization of acrylamide | bead polymerization of divinylbenzene | bead polymerization of divinylbenzene | interfacial polymerization of nylon 6 | interfacial polymerization of nylon 6 | 10 | 10 | evaluation of networks by tensile and swelling experiments | evaluation of networks by tensile and swelling experiments | rheology of polymer solutions and suspensions | rheology of polymer solutions and suspensions | physical properties of natural and silicone rubber | physical properties of natural and silicone rubber

License

Content within individual OCW courses is (c) by the individual authors unless otherwise noted. MIT OpenCourseWare materials are licensed by the Massachusetts Institute of Technology under a Creative Commons License (Attribution-NonCommercial-ShareAlike). For further information see http://ocw.mit.edu/terms/index.htm

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Delamination cracks in h-BN particles.

Description

h-BN particles were subjected to compressive stress in the (0001) planes (within a silicon nitride particulate-reinforced silicon carbide composite). The occurrence of BN inclusions results from the introduction of colloidal BN into the hot isostatic pressing process. They are formed from B2O3 present as a thin surface film on the BN particles in the barrier layer. B2O3 will be molten during the pressing process and will diffuse rapidly into the powder compact and react with Si3N4 to form BN. Such inclusions can be related to failure under thermal cycling or creep test conditions (due to cavities and microcracks associated with them), may be grain growth controllers, and may influence crack deflection and slow crack growth at high temperatures. Delamination cracks probably originate during

Subjects

boron nitride | ceramic | composite material | silicon carbide | silicon nitride | DoITPoMS | University of Cambridge | micrograph | corematerials | ukoer

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?-Si3N4 grain

Description

The micrograph shows h-BN inclusion (precipitate) in a ?-Si3N4 grain (within a silicon nitride particulate-reinforced silicon carbide composite). The occurrence of BN inclusions results from the introduction of colloidal BN into the hot isostatic pressing process. They are formed from B2O3 present as a thin surface film on the BN particles in the barrier layer. B2O3 will be molten during the pressing process and will diffuse rapidly into the powder compact and react with Si3N4 to form BN. Such inclusions can be related to failure under thermal cycling or creep test conditions (due to cavities and microcracks associated with them), may be grain growth controllers, and may influence crack deflection and slow crack growth at high temperatures.

Subjects

boron nitride | ceramic | composite material | silicon carbide | silicon nitride | DoITPoMS | University of Cambridge | micrograph | corematerials | ukoer

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Misoriented interphase boundary between h-BN and SiC grains

Description

The micrograph shows misoriented interphase boundary between h-BN (precipitate) and SiC grains (within a silicon nitride particulate-reinforced silicon carbide composite). The occurrence of BN inclusions results from the introduction of colloidal BN into the hot isostatic pressing process. They are formed from B2O3 present as a thin surface film on the BN particles in the barrier layer. B2O3 will be molten during the pressing process and will diffuse rapidly into the powder compact and react with Si3N4 to form BN. Such inclusions can be related to failure under thermal cycling or creep test conditions (due to cavities and microcracks associated with them), may be grain growth controllers, and may influence crack deflection and slow crack growth at high temperatures.

Subjects

boron nitride | ceramic | composite material | silicon carbide | silicon nitride | DoITPoMS | University of Cambridge | micrograph | corematerials | ukoer

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Interface boundary between h-BN and Si3N4 grains

Description

The micrograph shows a regularly stepped interface boundary between h-BN (precipitate) and Si3N4 grains (within a silicon nitride particulate-reinforced silicon carbide composite). The occurrence of BN inclusions results from the introduction of colloidal BN into the hot isostatic pressing process. They are formed from B2O3 present as a thin surface film on the BN particles in the barrier layer. B2O3 will be molten during the pressing process and will diffuse rapidly into the powder compact and react with Si3N4 to form BN. Such inclusions can be related to failure under thermal cycling or creep test conditions (due to cavities and microcracks associated with them), may be grain growth controllers, and may influence crack deflection and slow crack growth at high temperatures.

Subjects

boron nitride | ceramic | composite material | silicon carbide | silicon nitride | DoITPoMS | University of Cambridge | micrograph | corematerials | ukoer

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An amorphous phase trapped at a triple junction between Si3N4 grains

Description

The micrograph shows an amorphous phase trapped at a triple junction between Si3N4 grains (within a silicon nitride particulate-reinforced silicon carbide composite). The amorphous phase extends into at least one of the grain boundaries with a thickness of about 10 angstrom.

Subjects

ceramic | composite material | silicon carbide | silicon nitride | DoITPoMS | University of Cambridge | micrograph | corematerials | ukoer

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Crystalline triple junction between SiC grains

Description

The micrograph shows part of a crystalline triple junction between SiC grains (within a silicon nitride particulate-reinforced silicon carbide composite).

Subjects

ceramic | composite material | silicon carbide | silicon nitride | DoITPoMS | University of Cambridge | micrograph | corematerials | ukoer

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